Product Index > Circuit Protection > Gas Discharge Tube (GDT)
Gas Discharge Tube (GDT)0 results
Manufacturers
Analog Devices, Inc. Bencent BORN Bourns Brightking Elec C&K Components Diodes Inc. DongChen Essentra FeiHong GOFORD GOODWORK Guangdong Fenghua Advanced Tech GW HGSEMI Honeywell HUASHUO Jiangsu JieJie Microelectronics Kingbright KUU Leiditech Leshan Radio Co. Littelfuse NXP Semiconductors Ohmite Omron onsemi Panasonic Renesas Shanghai Belling Shanghai Prisemi Elec Shenzhen Jinkaisheng Elec Shenzhen Ruilongyuan Elec Skyworks Solutions SOCAY Elec SPTECH STMicroelectronics TDK TE Connectivity TLC Electronic Tokyo Cosmos Elec VBsemi Vishay Wayon Will Semiconductor Wuxi NCE Power Semiconductor
Reverse Leakage Current (Ir)
100u03bcA@100V 50nA@23.1V
Tolerance
- -10%~+15% u00b110% u00b120% u00b125% u00b130% u00b15%
Diode Configuration
1u5bf9u5171u9634u6781 u72ecu7acbu5f0f
Type
- Nu6c9fu9053 u78b3u819cu7535u963b
Nominal Impulse Discharge Current
- 100A 100kA 10kA 1kA 2.5kA 20kA 2kA 3kA 500A 5kA
Maximum Capacitance @ 1MHz
- 0.5pF 0.8pF 1.2pF 1.5pF 1pF 2pF 8pF
Number of Poles
- 2 3
DC Spark-over Voltage
1000V 100V 110V 120V 1400V 145V 150V 1600V 2000V 200V 230V 2500V 250V 2700V 3000V 300V 3500V 350V 3600V 400V 420V 470V 5000V 55V~95V 6000V 600V 70V 75V 800V 90V
Reverse Voltage (Vr)
100V 400V 60V
Forward Voltage (Vf@If)
2.2V@4A 670mV@10A 700mV@3A
Average Rectified Current (Io)
10A 3A 4A
Drain Source Voltage (Vdss)
- 500V
Continuous Drain Current (Id)
- 9A
Drain Source On Resistance (RDS(on)@Vgs,Id)
- 900mu03a9@10V,2.5A
Power Dissipation (Pd)
- 147W
Gate Threshold Voltage (Vgs(th)@Id)
- 4V@250u03bcA
Temperature Coefficient
- -450ppm/u2103
Power(Watts)
1W 400mW
Resistance
15ku03a9 500ku03a9
Stocking Option
Environmental Options
Media
Price
Mfr Part
Quantity
Price
Series
Package
Type
Nominal Impulse Discharge Current
Maximum Capacitance @ 1MHz
Number of Poles
DC Spark-over Voltage
Reverse Voltage (Vr)
Forward Voltage (Vf@If)
Average Rectified Current (Io)
Drain Source Voltage (Vdss)
Continuous Drain Current (Id)
Drain Source On Resistance (RDS(on)@Vgs,Id)
Power Dissipation (Pd)
Gate Threshold Voltage (Vgs(th)@Id)
Temperature Coefficient
Power(Watts)
Resistance
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