Product Index > Integrated Circuits (ICs) > Memory > NOR FLASH
NOR FLASH0 results
Manufacturers
BOYAMICRO Changjiang Electronics Cypress Semiconductor Dosilicon Elite Semiconductor Memory Technology FUDAN MICRO GigaDevice Greenliant HGSEMI HUAHONG LAPIS Semiconductor Macronix Micron onsemi Panasonic ROHM Samsung Silicon Labs SPANSION XTX Zetta
Memory Size
- 128M 128Mbit 16Mb (2M x 8) 16Mb (528 Bytes x 4096 pages) 1Gb (128M x 8) 1Mb (128K x 8) 2Gb (256M x 8, 128M x 16) 32Gb (4G x 8) 32M 32Mb (4M x 8, 2M x 16) 32Mb (4M x 8) 4Mb 4Mb (4M x 1, 2M x 2) 4Mb (512K x 8) 8Mb (1M x 8)
Memory Interface
- CFI Parallel SPI SPI - Dual I/O SPI - Dual/Quad I/O, QPI
Memory Format
- FLASH
Voltage - Supply
- 2.3V ~ 3.6V 2.5V ~ 3.6V 2.7V ~ 3.6V 4.5V ~ 5.5V
Memory Type
- Non-Volatile
Byte-Program Time - tBP
- 30us/2.5us
Pageu00a0Programming Time - tPP
- 0.6ms 0.7ms 70ns
Technology
- NOR Flash
Clock Frequency
- 108MHz 120MHz
Operating Temperature
- -40u2103~+85u2103 -40u2103~85u2103
Supply Voltage
1.65V~1.9V 2.7V~3.6V
Standby supply current
20u03bcA 2u03bcA
Supply Current (Erase)
15mA 25mA
Supply Current (Program)
15mA 28mA
Supply Current (Read)
25mA 27mA
Clock Frequency (fc)
104MHz 133MHz
Page Programming Time (Tpp)
0.6ms 0.8ms
Block Erase Time (tBE)
200ms@(64KB) 350ms@(64KB)
Stocking Option
Environmental Options
Media
Price
Mfr Part
Quantity
Price
Series
Package
Voltage - Supply
Memory Type
Byte-Program Time - tBP
Pageu00a0Programming Time - tPP
Technology
Clock Frequency
Operating Temperature
Supply Voltage
Standby supply current
Supply Current (Erase)
Supply Current (Program)
Supply Current (Read)
Clock Frequency (fc)
Page Programming Time (Tpp)
Block Erase Time (tBE)
1 / 0 Page , Total 0 Items
1
  • sale@hongruida.com
facebook googleplus rss X youtube
master visa westernunion paypal